
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN
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| Package/Case | TO-220 |
| Collector Base Voltage (VCBO) | 35V |
| Emitter Base Voltage (VEBO) | 4V |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Polarity | NPN |
| Power Dissipation | 1.5W |
| RoHS Compliant | Yes |
| RoHS | Compliant |
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