NTE Electronics
NTE36
Power Bipolar Transistor, 12A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN
MountingThrough Hole
PolarityNPN
Power100W
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Technical Specifications
NTE Electronics NTE36 technical specifications.
General
| Collector Base Voltage (VCBO) | 160V |
| Collector Emitter Breakdown Voltage | 140V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 140V |
| Collector-emitter Voltage-Max | 2.5V |
| Emitter Base Voltage (VEBO) | 6V |
| Height | 0.787inch |
| Length | 0.614inch |
| Max Collector Current | 100uA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 100W |
| Mount | Through Hole |
| Polarity | NPN |
| Power Dissipation | 100W |
| RoHS Compliant | Yes |
| Transition Frequency | 15MHz |
| Width | 0.19inch |
Compliance
| RoHS | Compliant |
Datasheet
NTE Electronics NTE36 Datasheet
Download the complete datasheet for NTE Electronics NTE36 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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