NTE Electronics
NTE396
Small Signal Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN
Small Signal Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN
PackageTO-39
MountingThrough Hole
PolarityNPN
Power1W
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Technical Specifications
NTE Electronics NTE396 technical specifications.
General
| Package/Case | TO-39 |
| Collector Base Voltage (VCBO) | 450V |
| Collector Emitter Breakdown Voltage | 350V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 350V |
| Collector-emitter Voltage-Max | 500mV |
| Diameter | 9.39mm |
| Emitter Base Voltage (VEBO) | 7V |
| Height | 0.26inch |
| Max Collector Current | 20uA |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Polarity | NPN |
| Power Dissipation | 1W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 15MHz |
Compliance
| RoHS | Compliant |
Datasheet
NTE Electronics NTE396 Datasheet
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