NTE Electronics
NTE464
Small Signal Field-Effect Transistor, 25V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
PackageTO-72-3
MountingThrough Hole
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Technical Specifications
NTE Electronics NTE464 technical specifications.
General
| Package/Case | TO-72-3 |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Voltage (Vdss) | 25V |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 5pF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Through Hole |
| Rds On Max | 600R |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
NTE Electronics NTE464 Datasheet
Download the complete datasheet for NTE Electronics NTE464 to view detailed technical specifications.
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