NTE490

Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

PackageTO-92

MountingThrough Hole

PolarityN

Power350mW

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NTE Electronics NTE490 technical specifications.

Package/Case	TO-92
Continuous Drain Current (ID)	500mA
Drain to Source Breakdown Voltage	90V
Drain to Source Resistance	5R
Drain to Source Voltage (Vdss)	60V
Gate to Source Voltage (Vgs)	20V
Height	0.21inch
Length	0.204inch
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	350mW
Mount	Through Hole
Polarization	N
Power Dissipation	350mW
Rds On Max	5R
Reach SVHC Compliant	Unknown
RoHS Compliant	Yes
Threshold Voltage	2V
Turn-Off Delay Time	4ns
Turn-On Delay Time	4ns
Width	0.165inch