This silicon rectifier diode is listed in a Philips/NXP datasheet for the 1N4001G to 1N4007G family and carries a 50 V repetitive peak reverse voltage for the 1N4001 variant. The device is described as glass passivated and built in a rugged hermetically sealed glass package using a high-temperature alloyed construction. It supports 1.00 A average forward current at 75 °C ambient, 0.75 A average forward current at 100 °C ambient, and 30 A non-repetitive peak forward current on a 60 Hz half sinewave. Maximum forward voltage is 1.1 V at 1 A, and the datasheet gives a junction and storage temperature range from -65 °C to +175 °C.
NXP 1N4001 technical specifications.
| Repetitive peak reverse voltage | 50V |
| Continuous reverse voltage | 50V |
| Average forward current | 1.00 @ Tamb=75 °CA |
| Average forward current | 0.75 @ Tamb=100 °CA |
| Continuous forward current | 1.00 @ Tamb=75 °CA |
| Repetitive peak forward current | 10A |
| Non-repetitive peak forward current | 30A |
| Forward voltage | 1.1 max @ IF=1 AV |
| Full-cycle average forward voltage | 0.8 @ IF(AV)=1 AV |
| Reverse current | 10 max @ VR=VRmaxµA |
| Reverse current | 50 max @ VR=VRmax, Tamb=100 °CµA |
| Full-cycle average reverse current | 30 @ VR=VRRMmax, Tamb=75 °CµA |
| Thermal resistance, junction-to-tie-point | 46K/W |
| Thermal resistance, junction-to-ambient | 100K/W |
| Storage temperature range | -65 to +175°C |
| Junction temperature range | -65 to +175°C |
| RoHS | Unconfirmed |
No datasheet is available for this part.
