PackageSOT
PolarityN-CHANNEL
Power830mW
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Technical Specifications
NXP 2N7002E215 technical specifications.
General
Package/Case
SOT
Continuous Drain Current (ID)
385mA
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
3R
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
3R
Gate to Source Voltage (Vgs)
30V
Height
1mm
Input Capacitance
50pF
Lead Free
Lead Free
Length
3mm
Max Dual Supply Voltage
60V
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
830mW
Nominal Vgs
2V
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
830mW
Radiation Hardening
No
Rds On Max
3R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchMOS™
Threshold Voltage
2V
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
NXP 2N7002E215 Datasheet
Download the complete datasheet for NXP 2N7002E215 to view detailed technical specifications.
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