The 2PB710AS115 is a PNP transistor from NXP with a maximum collector current of 500mA and a maximum operating temperature of 150°C. It features a gain bandwidth product of 140MHz and a maximum breakdown voltage of 50V. The transistor is packaged in a TO-236-3 surface mount package and is available in quantities of 12,000 per reel. The device is suitable for use in a variety of applications, including those requiring high current and high frequency operation.
PackageTO-236-3
MountingSurface Mount
PolarityPNP
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Technical Specifications
NXP 2PB710AS115 technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | -60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 600mV |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 140MHz |
| hFE Min | 85 |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Package Quantity | 12000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Transition Frequency | 140MHz |
Compliance
| RoHS | Compliant |
Datasheet
NXP 2PB710AS115 Datasheet
Download the complete datasheet for NXP 2PB710AS115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.