The 74ABT20N112 is a dual NAND gate IC from NXP, featuring a DIP package and through-hole mount. It can handle high-level output currents of up to 20mA and low-level output currents of up to 15mA. The device operates within a temperature range of -40°C to 85°C and can be supplied with voltages between 4.5V and 5.5V. With a propagation delay of 3.9ns and a turn-on delay time of 2.7ns, this IC is suitable for high-speed applications.
PackageDIP
MountingThrough Hole
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Technical Specifications
NXP 74ABT20N112 technical specifications.
General
| Package/Case | DIP |
| Contact Plating | Gold |
| High Level Output Current | 20mA |
| Logic Function | NAND GATE |
| Low Level Output Current | 15mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Max Supply Voltage | 5.5V |
| Min Supply Voltage | 4.5V |
| Mount | Through Hole |
| Number of Circuits | 2 |
| Number of Gates | 2 |
| Number of Input Lines | 4 |
| Number of Inputs | 4 |
| Number of Output Lines | 1 |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Propagation Delay | 3.9ns |
| Quiescent Current | 50uA |
| Series | 74ABT |
| Turn-On Delay Time | 2.7ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP 74ABT20N112 Datasheet
Download the complete datasheet for NXP 74ABT20N112 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.