The 74HCT03N652 is a 4-input NAND gate IC from NXP, packaged in a PDIP package, suitable for through-hole mounting. It operates over a temperature range of -40°C to 125°C and is powered by a supply voltage of 4.5 to 5.5V. The device has a propagation delay of 36ns and a quiescent current of 2uA. It is not radiation hardened and is manufactured with CMOS technology.
PackagePDIP
MountingThrough Hole
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Technical Specifications
NXP 74HCT03N652 technical specifications.
General
| Package/Case | PDIP |
| Contact Plating | Gold |
| High Level Output Current | -4mA |
| Lead Free | Lead Free |
| Logic Function | NAND GATE |
| Low Level Output Current | 4mA |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Max Supply Voltage | 5.5V |
| Min Supply Voltage | 4.5V |
| Mount | Through Hole |
| Number of Circuits | 4 |
| Number of Elements | 4 |
| Number of Functions | 4 |
| Number of Gates | 4 |
| Number of Input Lines | 2 |
| Number of Inputs | 2 |
| Number of Output Lines | 1 |
| Number of Outputs | 1 |
| Operating Supply Voltage | 5V |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Propagation Delay | 36ns |
| Quiescent Current | 2uA |
| Radiation Hardening | No |
| Series | 74HCT |
| Supply Voltage-Nom | 5.5V |
| Technology | CMOS |
| Turn-On Delay Time | 10ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP 74HCT03N652 Datasheet
Download the complete datasheet for NXP 74HCT03N652 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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