High-speed switching rectifier diode, featuring a SILICON element and a single diode element. This general-purpose rectifier is housed in a TO-236AB (SOT-23) package with 3 terminals, designed for dual terminal positioning. It operates across a wide temperature range from -65°C to 150°C, with a maximum power dissipation of 0.25W and a repetitive peak reverse voltage rating of 100V.
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Technical Specifications
NXP BAS16,215 technical specifications.
General
Max Operating Temperature
150
Number of Terminals
3
Min Operating Temperature
-65
Terminal Position
DUAL
JEDEC Package Code
TO-236AB
Pin Count
3
Number of Elements
1
Diode Element Material
SILICON
Diode Type
RECTIFIER DIODE
Rep Pk Reverse Voltage-Max
100
Power Dissipation-Max
0.25
Compliance
RoHS
Yes
Eccn Code
EAR99
HTS Code
8541.10.00.70
REACH
Compliant
Military Spec
False
Datasheet
NXP BAS16,215 Datasheet
Download the complete datasheet for NXP BAS16,215 to view detailed technical specifications.
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