High-speed switching rectifier diode, featuring a silicon diode element and a maximum operating temperature of 150°C. This general-purpose rectifier offers a maximum repetitive peak reverse voltage of 85V and a maximum power dissipation of 0.4W. It is a 2-terminal device with dual terminal positions, suitable for applications requiring fast switching performance.
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NXP BAS316,115 technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Terminal Position | DUAL |
| Pin Count | 2 |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 85 |
| Power Dissipation-Max | 0.4 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.70 |
| REACH | Compliant |
| Military Spec | False |
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