The BAT54H,115 is a silicon rectifier diode with a maximum operating temperature of 125 degrees Celsius and a minimum operating temperature of -65 degrees Celsius. It has a maximum reverse voltage of 30 volts and a maximum power dissipation of 0.375 watts. The diode is a dual terminal device with a pin count of 2 and is constructed from silicon. It is available in a 2-pin package type R-PDSO-F2.
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Technical Specifications
NXP BAT54H,115 technical specifications.
General
| Max Operating Temperature | 125 |
| Number of Terminals | 2 |
| Min Operating Temperature | -65 |
| Terminal Position | DUAL |
| Pin Count | 2 |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 30 |
| Power Dissipation-Max | 0.375 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.70 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
NXP BAT54H,115 Datasheet
Download the complete datasheet for NXP BAT54H,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.