The BAW101215 diode from NXP features a maximum operating temperature of 150°C and a minimum operating temperature of -65°C. It has a maximum repetitive reverse voltage of 600V and a maximum reverse voltage of 300V. The diode is designed for surface mount applications and has a power dissipation of 350mW. It also has a reverse recovery time of 50ns and is lead free.
PackageTO-253-4
MountingSurface Mount
Power350mW
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Technical Specifications
NXP BAW101215 technical specifications.
General
| Average Rectified Current | 250mA |
| Package/Case | TO-253-4 |
| Forward Current | 250mA |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Repetitive Reverse Voltage (Vrrm) | 600V |
| Max Reverse Voltage (DC) | 300V |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Peak Non-Repetitive Surge Current | 4.5A |
| Power Dissipation | 350mW |
| Radiation Hardening | No |
| Reverse Recovery Time | 50ns |
| Reverse Recovery Time-Max | 50ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP BAW101215 Datasheet
Download the complete datasheet for NXP BAW101215 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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