The BC847BPN/DG is a dual bipolar junction transistor from NXP, featuring a TSSOP package and surface mount design. It can withstand collector base voltages of up to 50V, collector emitter voltages of up to 45V, and emitter base voltages of up to 5V. The device operates within a temperature range of -65°C to 150°C and has a maximum power dissipation of 400mW.
Frequency100MHz
PackageTSSOP
MountingSurface Mount
PolarityNPN, PNP
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Technical Specifications
NXP BC847BPN/DG technical specifications.
General
| Package/Case | TSSOP |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Voltage (VCEO) | 45V |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Polarity | NPN, PNP |
| Power Dissipation | 400mW |
Compliance
| RoHS | Compliant |
Datasheet
NXP BC847BPN/DG Datasheet
Download the complete datasheet for NXP BC847BPN/DG to view detailed technical specifications.
No datasheet is available for this part.