The BC849BW,135 is a single NPN transistor with a collector base voltage of 30V and a maximum collector current of 100mA. It has a maximum power dissipation of 200mW and is packaged in a surface mount SC package. The transistor operates over a temperature range of -65°C to 150°C and is RoHS compliant. It has a frequency of 100MHz and a gain bandwidth product of 100MHz.
Frequency100MHz
PackageSC
MountingSurface Mount
PolarityNPN
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Technical Specifications
NXP BC849BW,135 technical specifications.
General
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 600mV |
| Contact Plating | Tin |
| Element Configuration | Single |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 200mW |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
Compliance
| RoHS | Compliant |
Datasheet
NXP BC849BW,135 Datasheet
Download the complete datasheet for NXP BC849BW,135 to view detailed technical specifications.
No datasheet is available for this part.