NXP
BC857CT-7-F
DIODES INC. - BC857CT-7-F - Bipolar (BJT) Single Transistor, PNP, -45 V, 100 MHz, 150 mW, -100 mA, 520 hFE
PackageTO-236-3
MountingSurface Mount
PolarityPNP
Power150mW
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Technical Specifications
NXP BC857CT-7-F technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 600mV |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 500mA |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 150mW |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 120MHz |
Compliance
| RoHS | Compliant |
Datasheet
NXP BC857CT-7-F Datasheet
Download the complete datasheet for NXP BC857CT-7-F to view detailed technical specifications.
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