DIODES INC. - BC857CT-7-F - Bipolar (BJT) Single Transistor, PNP, -45 V, 100 MHz, 150 mW, -100 mA, 520 hFE
NXP BC857CT-7-F technical specifications.
| Package/Case | TO-236-3 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 600mV |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 500mA |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 150mW |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 120MHz |
| RoHS | Compliant |
No datasheet is available for this part.
