The NXP BC858B/T3 is a PNP transistor packaged in a SOT-23 case, suitable for operation at temperatures between -65°C and 150°C. It can handle a maximum power dissipation of 250mW and has a collector-emitter saturation voltage of -250mV. The device has a gain bandwidth product of 100MHz and a minimum current gain of 220.
PackageSOT-23
PolarityPNP
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Technical Specifications
NXP BC858B/T3 technical specifications.
General
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Saturation Voltage | -250mV |
| Collector-emitter Voltage-Max | 30V |
| Continuous Collector Current | 100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 220 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
Compliance
| RoHS | Compliant |
Datasheet
NXP BC858B/T3 Datasheet
Download the complete datasheet for NXP BC858B/T3 to view detailed technical specifications.
No datasheet is available for this part.
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