The BCW29,235 is a surface mount PNP transistor with a collector-emitter breakdown voltage of 32V and a maximum collector current of 100mA. It operates at frequencies up to 100MHz and can dissipate a maximum power of 250mW. The transistor is packaged in a TO-236AB case and is available in quantities of 10,000 on tape and reel. It is RoHS compliant and suitable for use in applications where a PNP transistor is required. The transistor has a maximum operating temperature of 150°C and a minimum operating temperature of -65°C.
Frequency100MHz
PackageTO-236AB
MountingSurface Mount
PolarityPNP
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Technical Specifications
NXP BCW29,235 technical specifications.
General
| Package/Case | TO-236AB |
| Collector Base Voltage (VCBO) | 32V |
| Collector Emitter Breakdown Voltage | 32V |
| Collector Emitter Voltage (VCEO) | 32V |
| Collector-emitter Voltage-Max | 150mV |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 250mW |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
Compliance
| RoHS | Compliant |
Datasheet
NXP BCW29,235 Datasheet
Download the complete datasheet for NXP BCW29,235 to view detailed technical specifications.
No datasheet is available for this part.
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