N-channel RF MOSFET, surface mount, featuring a 7V drain-to-source voltage and 40mA continuous drain current. Operates at frequencies up to 800MHz with a 2dB noise figure. Housed in a 6-pin TSSOP package with tin-matte contact plating, this component offers a maximum power dissipation of 200mW and a wide operating temperature range from -65°C to 150°C. RoHS compliant and supplied in tape and reel packaging.
Frequency800MHz
PackageTSSOP
Voltage Rating7V
Current Rating40mA
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Technical Specifications
NXP BF1102R,115 technical specifications.
General
| Package/Case | TSSOP |
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 40mA |
| Current Rating | 40mA |
| Drain to Source Voltage (Vdss) | 7V |
| Frequency | 800MHz |
| Gate to Source Voltage (Vgs) | 15V |
| Height | 1mm |
| Length | 2.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Noise Figure | 2dB |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Test Voltage | 5V |
| Voltage Rating | 7V |
| Weight | 0.000265oz |
| Width | 1.35mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP BF1102R,115 Datasheet
Download the complete datasheet for NXP BF1102R,115 to view detailed technical specifications.
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