HF/VHF POWER MOS TRANSISTOR
Frequency108MHz
Voltage Rating125V
Current Rating16A
PolarityN-CHANNEL
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Technical Specifications
NXP BLF177CR112 technical specifications.
General
| Continuous Drain Current (ID) | 16A |
| Current Rating | 16A |
| Drain to Source Breakdown Voltage | 125V |
| Drain to Source Voltage (Vdss) | 125V |
| Frequency | 108MHz |
| Gain | 19dB |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 220W |
| Output Power | 150W |
| Package Quantity | 40 |
| Packaging | Tray |
| Polarity | N-CHANNEL |
| Power Dissipation | 220W |
| Series | 19dB |
| Test Voltage | 50V |
| Voltage Rating | 125V |
Compliance
| RoHS | Compliant |
Datasheet
NXP BLF177CR112 Datasheet
Download the complete datasheet for NXP BLF177CR112 to view detailed technical specifications.
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