RF power LDMOS transistor is used in cellular base-station Doherty amplifier designs operating from 2500 MHz to 2700 MHz. The referenced Doherty design operates at a 28 V drain supply with 52.5 dBm peak output power and 44.5 dBm average output power. The design data specifies 14 dB gain and 38 percent drain efficiency in symmetric operation.
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| Frequency Range | 2500 to 2700MHz |
| Peak Output Power | 52.5dBm |
| Average Output Power | 44.5dBm |
| Drain Supply Voltage | 28V |
| Gain | 14dB |
| Drain Efficiency | 38% |
| Amplifier Configuration | Symmetric Doherty |
| Application | WiMAX/LTE base-station RF power amplifier |
These are design resources that include the NXP BLF6G27-150P
User guide for SC1894 firmware version 4.1.03.08, providing evaluation procedures and performance data for RF power amplifier linearization.
