The BSP62115 is a surface-mount PNP transistor with a collector-emitter breakdown voltage of 80V and a maximum collector current of 1A. It has a maximum power dissipation of 1.25W and operates over a temperature range of -65°C to 150°C. The transistor is packaged in a TO-261-4 case and is lead-free. It has a high current gain of at least 2000 and a transition frequency of 200MHz.
PackageTO-261-4
MountingSurface Mount
PolarityPNP
Power1.25W
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Technical Specifications
NXP BSP62115 technical specifications.
General
| Package/Case | TO-261-4 |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | -1.3V |
| Collector Emitter Voltage (VCEO) | -80V |
| Collector-emitter Voltage-Max | 1.3V |
| hFE Min | 2000 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.25W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Polarity | PNP |
| Power Dissipation | 1.25W |
| Reach SVHC Compliant | No |
| Termination | SMD/SMT |
| Transition Frequency | 200MHz |
Compliance
| RoHS | Compliant |
Datasheet
NXP BSP62115 Datasheet
Download the complete datasheet for NXP BSP62115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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