The BSR16 is a PNP transistor with a collector-emitter breakdown voltage of 60V and a maximum collector current of 600mA. It has a high current gain of 100 and is suitable for use in applications where a high current gain is required. The transistor is packaged in a small outline SOT-23 package and is lead-free and RoHS compliant. It has a maximum power dissipation of 250mW and can operate over a temperature range of -65°C to 150°C.
PackageSOT-23
Current Rating-800mA
PolarityPNP
Power250mW
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Technical Specifications
NXP BSR16 technical specifications.
General
| Package/Case | SOT-23 |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Voltage (VCEO) | 1.6V |
| Current Rating | -800mA |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Packaging | Cut Tape |
| Polarity | PNP |
| Power Dissipation | 250mW |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 45ns |
| DC Rated Voltage | -60V |
Compliance
| RoHS | Compliant |
Datasheet
NXP BSR16 Datasheet
Download the complete datasheet for NXP BSR16 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.