The BSS192/T3 is a P-channel MOSFET in a SOT-89 package, rated for 200mA continuous drain current and 240V drain to source breakdown voltage. It features a fall time of 18ns and can handle up to 1W of power dissipation. The device operates over a temperature range of -65°C to 150°C and is available in quantities of 4000 per reel.
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NXP BSS192/T3 technical specifications.
| Package/Case | SOT-89 |
| Continuous Drain Current (ID) | 200mA |
| Drain to Source Breakdown Voltage | 240V |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1W |
| RoHS | Compliant |
