The BUK1M200-50SGTDT/R is a 50V N-CHANNEL MOSFET with a continuous drain current of 2.7A and a drain to source resistance of 380mR. It is packaged in a SO package and is rated for a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. The device has a power dissipation of 9.4W and a turn-off delay time of 3200ns.
PackageSO
PolarityN-CHANNEL
Power9.4W
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Technical Specifications
NXP BUK1M200-50SGTDT/R technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 2.7A |
| Drain to Source Breakdown Voltage | 50V |
| Drain to Source Resistance | 380mR |
| Fall Time | 1600ns |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 9.4W |
| Turn-Off Delay Time | 3200ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP BUK1M200-50SGTDT/R Datasheet
Download the complete datasheet for NXP BUK1M200-50SGTDT/R to view detailed technical specifications.
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