The BUK7105-40ATE,118 is a high-power N-Channel MOSFET from NXP, featuring a maximum continuous drain current of 155A and a drain-to-source breakdown voltage of 40V. It operates within a temperature range of -55°C to 175°C and is packaged in a SOT case with tin contact plating. The device is RoHS compliant and suitable for high-power applications.
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NXP BUK7105-40ATE,118 technical specifications.
| Package/Case | SOT |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 155A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 5mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 110ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.5nF |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 272W |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 272W |
| Rds On Max | 5mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 155ns |
| Turn-On Delay Time | 35ns |
| RoHS | Compliant |
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