The BUK725R0-40C,118 is an N-Channel TrenchMOS MOSFET from NXP with a maximum drain to source breakdown voltage of 40V and a continuous drain current of 75A. It features a low drain to source resistance of 5mR and a maximum power dissipation of 157W. The device is packaged in a SOT package and is lead free and RoHS compliant. It operates over a temperature range of -55°C to 175°C.
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NXP BUK725R0-40C,118 technical specifications.
| Package/Case | SOT |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 75A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 5mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 63ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.82nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 157W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 157W |
| Rds On Max | 5mR |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 82ns |
| Turn-On Delay Time | 27ns |
| RoHS | Compliant |
Download the complete datasheet for NXP BUK725R0-40C,118 to view detailed technical specifications.
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