N-channel TrenchMOS logic level FET in a TO-220AB 3-pin package. Features 100V drain-source breakdown voltage (Vdss) and a continuous drain current (ID) of 23A. Offers a low Rds On of 72mR at a 10V gate-source voltage. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 98W. Includes fast switching characteristics with a turn-on delay of 13ns and fall time of 57ns. RoHS compliant.
PackageTO-220AB
PolarityN-CHANNEL
Power98W
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Technical Specifications
NXP BUK9575-100A,127 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 23A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 72mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 57ns |
| Gate to Source Voltage (Vgs) | 15V |
| Height | 9.4mm |
| Input Capacitance | 1.704nF |
| Length | 10.3mm |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 98W |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 98W |
| Rds On Max | 72mR |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 58ns |
| Turn-On Delay Time | 13ns |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP BUK9575-100A,127 Datasheet
Download the complete datasheet for NXP BUK9575-100A,127 to view detailed technical specifications.
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