The BUK965R4-40E,118 is a single N-channel TrenchMOS MOSFET from NXP, featuring a maximum drain current of 75A and a breakdown voltage of 40V. It has a maximum power dissipation of 137W and operates within a temperature range of -55°C to 175°C. The device is packaged in a SOT package and is RoHS compliant.
PackageSOT
PolarityN-CHANNEL
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Technical Specifications
NXP BUK965R4-40E,118 technical specifications.
General
| Package/Case | SOT |
| Continuous Drain Current (ID) | 75A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 4.3mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 37ns |
| Gate to Source Voltage (Vgs) | 15V |
| Input Capacitance | 4.483nF |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 137W |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 4.4mR |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 27ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP BUK965R4-40E,118 Datasheet
Download the complete datasheet for NXP BUK965R4-40E,118 to view detailed technical specifications.
No datasheet is available for this part.