The BUK9Y30-75BT/R is a 75V N-Channel MOSFET with a continuous drain current of 34A and a drain to source resistance of 28mR. It features a power dissipation of 85W and a maximum operating temperature of 175°C. The device is packaged in a SOT-669 package and is RoHS compliant. It has a fall time of 83ns and a turn-off delay time of 51ns, making it suitable for high-speed applications.
PackageSOT-669
PolarityN-CHANNEL
Power85W
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Technical Specifications
NXP BUK9Y30-75BT/R technical specifications.
General
| Package/Case | SOT-669 |
| Continuous Drain Current (ID) | 34A |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Resistance | 28mR |
| Fall Time | 83ns |
| Gate to Source Voltage (Vgs) | 15V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 1500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 85W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 51ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP BUK9Y30-75BT/R Datasheet
Download the complete datasheet for NXP BUK9Y30-75BT/R to view detailed technical specifications.
No datasheet is available for this part.