The BZV85-C30,113 PNP transistor features a collector emitter breakdown voltage of 45V and a maximum collector current of 100mA. It is packaged in a DO-41 package and is suitable for through hole mounting. The transistor has a maximum operating temperature range of -65°C to 200°C and a maximum power dissipation of 1.3W. It is lead free and RoHS compliant.
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NXP BZV85-C30,113 technical specifications.
| Package/Case | DO-41 |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | -300mV |
| Contact Plating | Tin |
| ESD Protection | No |
| Height | 2.6mm |
| hFE Min | 125 |
| Impedance | 45R |
| Lead Free | Lead Free |
| Length | 4.8mm |
| Max Collector Current | 100mA |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.3W |
| Max Reverse Leakage Current | 50nA |
| Mount | Through Hole |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1.3W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Tolerance | 5% |
| Voltage Tolerance | 5% |
| Width | 2.6mm |
| Zener Voltage | 30V |
| RoHS | Compliant |
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