
The BZV85-C36,113 is a PNP transistor with a collector-emitter breakdown voltage of 45V and a saturation voltage of -100mV. It has a minimum current gain of 200 and an impedance of 50 ohms. The device is lead-free and RoHS compliant, with a maximum operating temperature of 200°C and a minimum operating temperature of -65°C. It is available in a DO-41 package, mounted through a hole, and packaged in a tape and reel format.
Sign in to ask questions about the NXP BZV85-C36,113 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
NXP BZV85-C36,113 technical specifications.
| Package/Case | DO-41 |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | -100mV |
| hFE Min | 200 |
| Impedance | 50R |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.3W |
| Max Reverse Leakage Current | 50nA |
| Mount | Through Hole |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1.3W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Tolerance | 5% |
| Voltage Tolerance | 5% |
| Zener Current | 500mA |
| Zener Voltage | 36V |
| RoHS | Compliant |
Download the complete datasheet for NXP BZV85-C36,113 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.