The HEF4016BT652 is a quad 2-input NAND gate from NXP, packaged in a surface-mount SO package. It operates over a temperature range of -40°C to 85°C and has a maximum power dissipation of 400mW. The device is available in a single or dual supply configuration and has a maximum on-state resistance of 350 ohms. The HEF4016BT652 is not radiation hardened and is packaged in a rail or tube format with 57 devices per package.
NXP HEF4016BT652 technical specifications.
| Package/Case | SO |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 400mW |
| Max Supply Voltage | 15.5V |
| Min Supply Voltage | 4.5V |
| Mount | Surface Mount |
| Number of Channels | 4 |
| Number of Inputs | 4 |
| Number of Outputs | 4 |
| On-State Resistance | 350R |
| Operating Supply Current | 4uA |
| Operating Supply Voltage | 15V |
| Package Quantity | 57 |
| Packaging | Rail/Tube |
| Power Dissipation | 400mW |
| Radiation Hardening | No |
| Series | 4000B |
| Supply Type | Single, Dual |
| Throw Configuration | SPST |
| RoHS | Compliant |
No datasheet is available for this part.
