The HEF4023BP652 is a 3-input NAND gate integrated circuit from NXP, fabricated using CMOS technology. It operates within a supply voltage range of 3V to 15V and has a maximum operating temperature of 85°C. The device is packaged in a PDIP package and is mounted through a hole. The HEF4023BP652 features a propagation delay of 30ns and a quiescent current of 4uA.
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NXP HEF4023BP652 technical specifications.
| Package/Case | PDIP |
| High Level Output Current | -3.6mA |
| Lead Free | Lead Free |
| Logic Function | NAND GATE |
| Low Level Output Current | 3.6mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Max Supply Voltage | 15V |
| Min Supply Voltage | 3V |
| Mount | Through Hole |
| Number of Circuits | 3 |
| Number of Elements | 3 |
| Number of Gates | 3 |
| Number of Input Lines | 3 |
| Number of Inputs | 3 |
| Number of Output Lines | 1 |
| Number of Outputs | 1 |
| Output Current | 2.4mA |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Propagation Delay | 30ns |
| Quiescent Current | 4uA |
| Radiation Hardening | No |
| Series | 4000B |
| Supply Voltage-Nom | 15V |
| Technology | CMOS |
| Turn-On Delay Time | 25ns |
| RoHS | Compliant |
Download the complete datasheet for NXP HEF4023BP652 to view detailed technical specifications.
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