Mosfet, Power; N-channel; 0.15 Ohms (typ.); 200 V (min.) @ +25C; 200V; TO-220
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NXP IRF640 technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 18A |
| Current | 15A |
| Current Rating | 18A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 180mR |
| Drain to Source Voltage (Vdss) | 200V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.3nF |
| Lead Free | Contains Lead |
| Packaging | Rail/Tube |
| Power Dissipation | 125W |
| RoHS Compliant | Yes |
| Voltage | 200V |
| DC Rated Voltage | 200V |
| RoHS | Compliant |
