RF MOSFET transistor featuring N-channel polarity, a 68V drain-to-source breakdown voltage, and a 2.66GHz operating frequency. This component offers a 15.5dB gain, 20W output power, and a maximum power dissipation of 350W. Designed for screw mounting, it operates within a temperature range of -65°C to 225°C and is supplied in tape and reel packaging. It is halogen-free, lead-free, and RoHS compliant.
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| Current Rating | 900mA |
| Drain to Source Breakdown Voltage | 68V |
| Drain to Source Voltage (Vdss) | 68V |
| Frequency | 2.66GHz |
| Gain | 15.5dB |
| Gate to Source Voltage (Vgs) | 12V |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Frequency | 2.7GHz |
| Min Frequency | 2.6GHz |
| Max Operating Temperature | 225°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 20W |
| Max Power Dissipation | 350W |
| Mount | Screw |
| Number of Elements | 1 |
| Output Power | 20W |
| Package Quantity | 50 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 350W |
| RoHS Compliant | Yes |
| Test Voltage | 28V |
| Voltage Rating | 68V |
| DC Rated Voltage | 28V |
| Weight | 0.226635oz |
| RoHS | Compliant |
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