RF MOSFET transistor featuring N-channel polarity, a 68V drain-to-source breakdown voltage, and a 2.66GHz operating frequency. This component offers a 15.5dB gain, 20W output power, and a maximum power dissipation of 350W. Designed for screw mounting, it operates within a temperature range of -65°C to 225°C and is supplied in tape and reel packaging. It is halogen-free, lead-free, and RoHS compliant.
Frequency2.66GHz
Voltage Rating68V
Current Rating900mA
MountingScrew
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Technical Specifications
NXP MRF6S27085HR5 technical specifications.
General
Current Rating
900mA
Drain to Source Breakdown Voltage
68V
Drain to Source Voltage (Vdss)
68V
Frequency
2.66GHz
Gain
15.5dB
Gate to Source Voltage (Vgs)
12V
Halogen Free
Halogen Free
Lead Free
Lead Free
Max Frequency
2.7GHz
Min Frequency
2.6GHz
Max Operating Temperature
225°C
Min Operating Temperature
-65°C
Max Output Power
20W
Max Power Dissipation
350W
Mount
Screw
Number of Elements
1
Output Power
20W
Package Quantity
50
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
350W
RoHS Compliant
Yes
Test Voltage
28V
Voltage Rating
68V
DC Rated Voltage
28V
Weight
0.226635oz
Compliance
RoHS
Compliant
Datasheet
NXP MRF6S27085HR5 Datasheet
Download the complete datasheet for NXP MRF6S27085HR5 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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