The MRFE6S9135HSR5 is a high-power N-CHANNEL MOSFET from NXP with a maximum operating temperature of 150°C and a frequency of 940MHz. It has a drain to source breakdown voltage of 66V and an output power of 39W. The device is packaged in a tape and reel format with 50 units per package. The MOSFET is designed for high-power applications and can withstand a test voltage of 28V.
Frequency940MHz
Voltage Rating66V
PolarityN-CHANNEL
Power39W
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Technical Specifications
NXP MRFE6S9135HSR5 technical specifications.
General
| Drain to Source Breakdown Voltage | 66V |
| Drain to Source Voltage (Vdss) | 66V |
| Frequency | 940MHz |
| Gain | 21dB |
| Gate to Source Voltage (Vgs) | 12V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Output Power | 39W |
| Package Quantity | 50 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Test Voltage | 28V |
| Voltage Rating | 66V |
Compliance
| RoHS | Compliant |
Datasheet
NXP MRFE6S9135HSR5 Datasheet
Download the complete datasheet for NXP MRFE6S9135HSR5 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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