The PBHV8540ZT/R is a high-voltage NPN transistor from NXP, featuring a collector-base voltage of 500V and collector-emitter voltage of 400V. It can handle a maximum collector current of 500mA and has a gain bandwidth product of 30MHz. The device is packaged in a SC package and is RoHS compliant. It operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 1.4W.
PackageSC
PolarityNPN
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Technical Specifications
NXP PBHV8540ZT/R technical specifications.
General
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 500V |
| Collector-emitter Voltage-Max | 400V |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 30MHz |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.4W |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
NXP PBHV8540ZT/R Datasheet
Download the complete datasheet for NXP PBHV8540ZT/R to view detailed technical specifications.
No datasheet is available for this part.