The PBSS2540E115 is a single NPN transistor from NXP with a collector-emitter breakdown voltage of 40V and a maximum collector current of 500mA. It features a gain bandwidth product of 450MHz and a maximum power dissipation of 250mW. The transistor is packaged in a SC package and is suitable for operation over a temperature range of -65°C to 150°C.
Frequency450MHz
PackageSC
MountingSurface Mount
PolarityNPN
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Technical Specifications
NXP PBSS2540E115 technical specifications.
General
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 250mV |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 450MHz |
| Gain Bandwidth Product | 450MHz |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 250mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Termination | SMD/SMT |
| Transition Frequency | 450MHz |
Compliance
| RoHS | Compliant |
Datasheet
NXP PBSS2540E115 Datasheet
Download the complete datasheet for NXP PBSS2540E115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.