PBSS306NX,115

Name: PBSS306NX,115 NXP
Brand: NXP
SKU: PBSS306NX,115

NXP PBSS306NX,115 Bipolar (BJT) Single Transistor, NPN, 100 V, 110 MHz, 600 mW, 4.5 A, 40 hFE

PackageTO-243AA

MountingSurface Mount

PolarityNPN

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NXP PBSS306NX,115 technical specifications.

Package/Case	TO-243AA
Collector Base Voltage (VCBO)	100V
Collector Emitter Breakdown Voltage	100V
Collector Emitter Voltage (VCEO)	100V
Collector-emitter Voltage-Max	245mV
Emitter Base Voltage (VEBO)	5V
Gain Bandwidth Product	110MHz
hFE Min	200
Lead Free	Lead Free
Max Breakdown Voltage	100V
Max Collector Current	4.5A
Max Operating Temperature	150°C
Min Operating Temperature	-65°C
Max Power Dissipation	2.1W
Mount	Surface Mount
Package Quantity	1
Packaging	Tape and Reel
Polarity	NPN
Radiation Hardening	No
Reach SVHC Compliant	No
RoHS Compliant	Yes
Termination	SMD/SMT
Transition Frequency	110MHz

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.