The PBSS4350TT/R is a NPN transistor from NXP, packaged in a SOT-23 case. It has a collector-emitter voltage maximum of 50V and a collector-base voltage maximum of 50V. The transistor has a minimum current gain of 300 and a gain bandwidth product of 100MHz. It can handle a maximum power dissipation of 1.2W and operates over a temperature range of -65°C to 150°C.
PackageSOT-23
PolarityNPN
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Technical Specifications
NXP PBSS4350TT/R technical specifications.
General
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Saturation Voltage | 370mV |
| Collector-emitter Voltage-Max | 50V |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 300 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.2W |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
Compliance
| RoHS | Compliant |
Datasheet
NXP PBSS4350TT/R Datasheet
Download the complete datasheet for NXP PBSS4350TT/R to view detailed technical specifications.
No datasheet is available for this part.