The PBSS5220TT/R is a PNP transistor from NXP, packaged in a SOT-23 case. It can handle a collector-emitter voltage of up to 20V and a collector current of up to 2A. The device has a gain bandwidth product of 100MHz and a minimum current gain of 225. It operates over a temperature range of -65°C to 150°C and has a maximum power dissipation of 480mW.
NXP PBSS5220TT/R technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Saturation Voltage | -250mV |
| Collector-emitter Voltage-Max | 20V |
| Continuous Collector Current | 2A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 225 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 480mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS | Compliant |
No datasheet is available for this part.
