The PBSS5220TT/R is a PNP transistor from NXP, packaged in a SOT-23 case. It can handle a collector-emitter voltage of up to 20V and a collector current of up to 2A. The device has a gain bandwidth product of 100MHz and a minimum current gain of 225. It operates over a temperature range of -65°C to 150°C and has a maximum power dissipation of 480mW.
PackageSOT-23
PolarityPNP
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Technical Specifications
NXP PBSS5220TT/R technical specifications.
General
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Saturation Voltage | -250mV |
| Collector-emitter Voltage-Max | 20V |
| Continuous Collector Current | 2A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 225 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 480mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
Compliance
| RoHS | Compliant |
Datasheet
NXP PBSS5220TT/R Datasheet
Download the complete datasheet for NXP PBSS5220TT/R to view detailed technical specifications.
No datasheet is available for this part.