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Technical Specifications
NXP PBSS5230T,215 technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 350mV |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 200MHz |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 480mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Polarity | PNP |
| Power Dissipation | 480mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
Compliance
| RoHS | Compliant |
Datasheet
NXP PBSS5230T,215 Datasheet
Download the complete datasheet for NXP PBSS5230T,215 to view detailed technical specifications.
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