The PBSS5560PA,115 is a PNP transistor with a collector-emitter breakdown voltage of 60V and a maximum collector current of 5A. It has a gain bandwidth product of 90MHz and a minimum current gain of 90. The transistor is packaged in a SOT-1061 surface mount package and is lead free and RoHS compliant. It operates over a temperature range of -55°C to 150°C with a maximum power dissipation of 2.1W.
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NXP PBSS5560PA,115 technical specifications.
| Package/Case | SOT-1061 |
| Collector Base Voltage (VCBO) | -60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector-emitter Voltage-Max | 450mV |
| Emitter Base Voltage (VEBO) | -7V |
| Gain Bandwidth Product | 90MHz |
| hFE Min | 90 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.1W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 90MHz |
| RoHS | Compliant |
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