The PBSS8110T215 is a surface mount NPN transistor from NXP, packaged in the TO-236AB case. It has a collector-emitter breakdown voltage of 100V and a collector-emitter saturation voltage of 200mV. The transistor can handle a maximum collector current of 1A and a maximum power dissipation of 480mW. It operates over a temperature range of -65°C to 150°C.
Frequency100MHz
PackageTO-236AB
Voltage100V
Current1A
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Technical Specifications
NXP PBSS8110T215 technical specifications.
General
| Package/Case | TO-236AB |
| Collector Base Voltage (VCBO) | 120V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 200mV |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 200mV |
| Current | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 1A |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 480mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Termination | SMD/SMT |
| Transition Frequency | 100MHz |
| Voltage | 100V |
| Width | 1.4mm |
| Zener Voltage | 12V |
Compliance
| RoHS | Compliant |
Datasheet
NXP PBSS8110T215 Datasheet
Download the complete datasheet for NXP PBSS8110T215 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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