NXP PBSS9110Y PNP Low Saturation Bipolar Transistor, 1 A, 100 V, 6-Pin UMT
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NXP PBSS9110Y technical specifications.
| Package/Case | SOT-363 |
| Collector Base Voltage (VCBO) | 120V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 320mV |
| Collector Emitter Voltage (VCEO) | 100V |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 1mm |
| hFE Min | 125 |
| Length | 2.2mm |
| Max Collector Current | 1A |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 625mW |
| Mount | Surface Mount |
| Polarity | PNP |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Width | 1.35mm |
| RoHS | Compliant |
No datasheet is available for this part.
