The PBSS9110YT/R is a PNP transistor from NXP with a collector-emitter voltage maximum of 100V and a continuous collector current of 1A. It has a gain bandwidth product of 100MHz and a minimum current gain of 150. The transistor is packaged in tape and reel format with 3000 units per reel. It operates within a temperature range of -65°C to 150°C and has a maximum power dissipation of 625mW.
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Technical Specifications
NXP PBSS9110YT/R technical specifications.
General
| Collector Base Voltage (VCBO) | 120V |
| Collector Emitter Saturation Voltage | -320mV |
| Collector-emitter Voltage-Max | 100V |
| Continuous Collector Current | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 150 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 625mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
Compliance
| RoHS | Compliant |
Datasheet
NXP PBSS9110YT/R Datasheet
Download the complete datasheet for NXP PBSS9110YT/R to view detailed technical specifications.
No datasheet is available for this part.