The PBSS9110Z/T3 is a PNP transistor with a collector base voltage rating of 120V and a collector-emitter saturation voltage of -320mV. It has a gain bandwidth product of 100MHz and a minimum current gain of 150. The device is packaged in a SC package and is available in quantities of 4000 per reel. The transistor operates over a temperature range of -65°C to 150°C and can dissipate up to 1.4W of power.
PackageSC
PolarityPNP
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Technical Specifications
NXP PBSS9110Z/T3 technical specifications.
General
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 120V |
| Collector Emitter Saturation Voltage | -320mV |
| Collector-emitter Voltage-Max | 100V |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 150 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.4W |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
Compliance
| RoHS | Compliant |
Datasheet
NXP PBSS9110Z/T3 Datasheet
Download the complete datasheet for NXP PBSS9110Z/T3 to view detailed technical specifications.
No datasheet is available for this part.