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Technical Specifications
NXP PDTA114ET215 technical specifications.
General
| Package/Case | TO-236AB |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 150mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 150mV |
| Emitter Base Voltage (VEBO) | -10V |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 180MHz |
| Voltage | 50V |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP PDTA114ET215 Datasheet
Download the complete datasheet for NXP PDTA114ET215 to view detailed technical specifications.
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